Illumination-dependent requirements for heterojunctions and carrier-selective contacts on silicon

0536704 - FZÚ 2021 RIV US eng J - Článek v odborném periodiku
Conrad, B. - Antognini, L. - Amalathas, A.P. - Boccard, M. - Holovský, Jakub
Illumination-dependent requirements for heterojunctions and carrier-selective contacts on silicon.
IEEE Journal of Photovoltaics. Roč. 10, č. 5 (2020), s. 1214-1225. ISSN 2156-3381. E-ISSN 2156-3403
Grant CEP: GA ČR GA18-24268S
Institucionální podpora: RVO:68378271
Klíčová slova: carrier selective contacts * heterojunctions * photovoltaic cells * silicon devices * simulation
Obor OECD: Electrical and electronic engineering
Impakt faktor: 3.887, rok: 2020
Způsob publikování: Omezený přístup
https://doi.org/10.1109/JPHOTOV.2020.2998900

High efficiency silicon solar cells generally feature carrier-selective contacts, for which there is interest in using a wide range of materials. The electrical and optical requirements that these layers must fulfill have been investigated previously for standard test conditions. Here, we investigate how the required work functions and layer thickness differ under other illumination conditions. The differences will be important for the optimization of tandem device subcells, and for devices which are intended for use in low-light conditions or under low-level concentration. Heterojunction cells are fabricated and the effect of reduced contact thickness and doping at different illumination levels is experimentally demonstrated. Simulations of a-Si/c-Si heterojunctions and ideal metal-semiconductor junctions reveal a logarithmic variation with illumination level of 0.1–10 suns in the electrode work function, and the heterojunction contact layer work function and thickness required.
Trvalý link: http://hdl.handle.net/11104/0314430