Nanostructuring of PMMA, GaAs, SiC and Si samples by focused XUV laser beam

0538597 - ÚFP 2021 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Frolov, Oleksandr - Koláček, Karel - Schmidt, Jiří - Štraus, Jaroslav - Choukourov, A.
Nanostructuring of PMMA, GaAs, SiC and Si samples by focused XUV laser beam.
Optics Damage and Materials Processing by EUV/X-ray Radiation VII. Bellingham: SPIE, 2019 - (Juha, L.; Bajt, S.; Guizard, S.), Roč. 11035 (2019), č. článku 110350K. Proceedings of SPIE, 11035. ISBN 978-151062736-9. ISSN 0277-786X.
[Conference on Optics Damage and Materials Processing by EUV/X-Ray Radiation VII. Praha (CZ), 01.04.2019-03.04.2019]
Grant CEP: GA MŠMT LTT17015
Institucionální podpora: RVO:61389021
Klíčová slova: Ablation * Diffraction pattern * Nanopatterning * Nanostructuring * XUV laser
Obor OECD: Optics (including laser optics and quantum optics)
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/11035/110350K/Nanostructuring-of-PMMA-GaAs-SiC-and-Si-samples-by-focused/10.1117/12.2521444.short?SSO=1

We report results of ablation experiments of different materials through Ni grid with an intense XUV laser beam. As a source of XUV radiation (energy of about 100 ïJ) with wavelength of 46.9 nm was used high-current capillary discharge driver. Ablated footprints were analyzed by optical microscope and by an atomic-force microscope (AFM). It was found that structure and period of diffraction pattern on PMMA sample (both in ablation and desorption area) depend on the distance from grid to the sample surface. Depth of ablation craters in a single window of PMMA for single shot was about of 80 nm, and period changes from 400 nm (on the edge) to 190 nm (in the middle) for grid further from surface, and from 400 nm (on the edge) to 10 nm (in the middle) for closer grid. Contrary to this, no diffraction patterns in ablation region and only slightly visible on the edge in the desorption region were observed on the surface of GaAs, SiC and Si samples for single shot. Depth of ablated craters in ablation region was about 100 nm for GaAs, 20 nm for Si and up to 5 nm for SiC. In desorption region depth of ablated craters is relatively shallow (up to 5 nm for GaAs and up to 2 nm for Si and SiC). In the case of irradiation samples by 5 shots ablated craters are deeper, but situation with diffraction pattern is the same as in the case of single shot for all materials.
Trvalý link: http://hdl.handle.net/11104/0316374