A series of (100-x) Si O2 -xHf O2 planar waveguides (10<45) doped with 0.01 mol % Er3+ was prepared by a sol-gel route. The lifetime of the I 13 2 4 level and the refractive index of the waveguides were measured. The magnetic dipole and electric dipole rates of the I 13 2 4 → I 15 2 4 transition were estimated as a function of the refractive index. The electric dipole transition rates were well reproduced by the real cavity model.

Evaluation of local field effect on the 4I 13/2 lifetimes in Er-doped silica-hafnia planar waveguides

Mattarelli, Maurizio;
2007

Abstract

A series of (100-x) Si O2 -xHf O2 planar waveguides (10<45) doped with 0.01 mol % Er3+ was prepared by a sol-gel route. The lifetime of the I 13 2 4 level and the refractive index of the waveguides were measured. The magnetic dipole and electric dipole rates of the I 13 2 4 → I 15 2 4 transition were estimated as a function of the refractive index. The electric dipole transition rates were well reproduced by the real cavity model.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11391/1118750
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