This paper presents a new erasing scheme for Flash memories characterized by a constant charge injected by each pulse. An analytical expression for the erased threshold voltage as a function of electrical, technological and physical parameters shows their impact on the erased threshold distribution spread. The dynamics of threshold distributions of entire memory sectors is analyzed and the attention is focused on its independence of the initial threshold voltage and on the creation and evolution of the distribution spread.
Threshold voltage spread in Flash memories under a constant DQ erasing scheme
CHIMENTON, Andrea;PELLATI, Paolo;OLIVO, Piero
2001
Abstract
This paper presents a new erasing scheme for Flash memories characterized by a constant charge injected by each pulse. An analytical expression for the erased threshold voltage as a function of electrical, technological and physical parameters shows their impact on the erased threshold distribution spread. The dynamics of threshold distributions of entire memory sectors is analyzed and the attention is focused on its independence of the initial threshold voltage and on the creation and evolution of the distribution spread.File in questo prodotto:
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