Dielectric properties of soft chemical method derived CaCu3Ti4O12 thin films onto Pt/TiO2/Si(100) substrates

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Data

2011-03-03

Autores

Moura, F.
Aguiar, E. C. [UNESP]
Longo, Elson [UNESP]
Varela, José Arana [UNESP]
Simões, Alexandre Zirpoli [UNESP]

Título da Revista

ISSN da Revista

Título de Volume

Editor

Elsevier B.V. Sa

Resumo

Calcium copper titanate, CaCu3Ti4O12 (CCTO), thin film has been deposited by the soft chemical method on Pt/Ti/SiO2/Si (1 0 0) substrates at 700 degrees C for 2 h. The peaks were indexed as cubic phase belonging to the Im-3 space group. The film exhibited a duplex microstructure consisting of large grains of 130 nm in length and regions of fine grains (less than 80 nm). The CCTO film capacitor showed a dielectric loss of 0.031 and a dielectric permittivity of 1020 at 1 MHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. Based on impedance analyses, the equivalent circuit of CCTO film consisting of a resistor connected in series with two resistor-capacitor (RC) elements. (C) 2011 Elsevier B.V. All rights reserved.

Descrição

Palavras-chave

Thin films, Dielectrics, Chemical synthesis, X-ray diffraction

Como citar

Journal of Alloys and Compounds. Lausanne: Elsevier B.V. Sa, v. 509, n. 9, p. 3817-3821, 2011.