Investigation of Backgate-Bias Dependence of Intrinsic Variability for UTB Hetero-Channel MOSFETs Considering Quantum Confinement

標題:	Investigation of Backgate-Bias Dependence of Intrinsic Variability for UTB Hetero-Channel MOSFETs Considering Quantum Confinement
作者:	Yu, Chang-Hung Su, Pin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-一月-2013
摘要:
URI:	http://hdl.handle.net/11536/124974
ISBN:	978-1-4799-0811-0; 978-1-4799-0812-7
ISSN:	1548-3770
期刊:	2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC)
起始頁:	59
結束頁:	60
顯示於類別：	會議論文