The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors

標題:	The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors
作者:	Kao, CC Lu, TC Huang, HW Chu, JT Peng, YC Yao, HH Tsai, JY Kao, TT Kuo, HC Wang, SC Lin, CF 光電工程學系 Department of Photonics
關鍵字:	AlN;distributed Bragg reflector (DBR);GaN;vertical-cavity surface-emitting laser (VCSEL)
公開日期:	1-三月-2006
摘要:	The characteristics of a GaN-based vertical-cavity surface-emitting laser (VCSEL) with 25 pairs AIN-GaN distributed Bragg reflector (DBR) and eight pairs Ta2O5-SiO2 DBR was investigated and analyzed under the optical pumping at room temperature. The GaN-based VCSEL emits a blue wavelength at 448 nm with a linewidth of 0.17 nm with a near-field emission spot diameter of about 3 mu m. The laser beam has a near linear polarization with a degree of polarization of about 84%. The laser shows a high spontaneous emission coupling efficiency of about 5 x 10(-2) and a high characteristic temperature of about 244 K.
URI:	http://dx.doi.org/10.1109/LPT.2006.871814 http://hdl.handle.net/11536/12571
ISSN:	1041-1135
DOI:	10.1109/LPT.2006.871814
期刊:	IEEE PHOTONICS TECHNOLOGY LETTERS
Volume:	18
Issue:	5-8
起始頁:	877
結束頁:	879
顯示於類別：	期刊論文

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