We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide film deposited on silicon wafer and in a multilayer Cu/VO2 Structure. All structures have been studied in the mid-infrared (MIR) region by analyzing the transmittance and the reflectance measurements.
Anomalous optical switching during semiconductor-metal phase transition of VO2 films on Si / Leahu, G.; Voti, R. Li; Sibilia, C.; Bertolotti, M.. - STAMPA. - (2014), pp. 409-411. (Intervento presentato al convegno 2014 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, METAMATERIALS 2014 tenutosi a Danimarca) [10.1109/MetaMaterials.2014.6948577].
Anomalous optical switching during semiconductor-metal phase transition of VO2 films on Si
Leahu, G.Investigation
;Voti, R. LiSoftware
;Sibilia, C.
Supervision
;Bertolotti, M.Supervision
2014
Abstract
We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide film deposited on silicon wafer and in a multilayer Cu/VO2 Structure. All structures have been studied in the mid-infrared (MIR) region by analyzing the transmittance and the reflectance measurements.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
