Stacked InAs/GaAs quantum dots (QDs) have been hydrogenated at different doses and their electronic properties investigated by photoluminescence, PL. In the as grown samples it has been found that: (a) The concentration of non radiative defects increases with decreasing the barrier width of the stack; (b) the electronic interaction between separate layers is already effective for 30 nm GaAs barriers; (c) In and Ga interdiffusion take place during the growth of QD layers. In the hydrogenated samples, an increase in the PL efficiency is observed, higher at room temperature, and attributed to passivation of carrier traps in the QDs. © 2005 American Institute of Physics.
Hydrogenation of Stacked Self-Assembled InAs/GaAs Quantum Dots / Mazzucato, S; Nardin, D; Polimeni, Antonio; Capizzi, Mario; Granados, D; AND GARCA, J. M.. - 772:(2005), pp. 621-622. (Intervento presentato al convegno 27th International Conference on the Physics of Semiconductors tenutosi a Flagstaff; United States nel 26-30 July 2004) [10.1063/1.1994260].
Hydrogenation of Stacked Self-Assembled InAs/GaAs Quantum Dots
POLIMENI, Antonio;CAPIZZI, Mario;
2005
Abstract
Stacked InAs/GaAs quantum dots (QDs) have been hydrogenated at different doses and their electronic properties investigated by photoluminescence, PL. In the as grown samples it has been found that: (a) The concentration of non radiative defects increases with decreasing the barrier width of the stack; (b) the electronic interaction between separate layers is already effective for 30 nm GaAs barriers; (c) In and Ga interdiffusion take place during the growth of QD layers. In the hydrogenated samples, an increase in the PL efficiency is observed, higher at room temperature, and attributed to passivation of carrier traps in the QDs. © 2005 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
