The GaP1-xNx conduction band is investigated experimentally (by excitation photoluminescence) and theoretically (by pseudopotential supercells) for N concentrations up to x=3.5% and photon energies ranging from the optical absorption edge to 3.2 eV. With increasing x: (i) a direct-like absorption edge develops smoothly and red-shifts rapidly overtaking energy-pinned cluster states; (ii) a broad absorption plateau appears between the X1c and the Γ1c critical points of GaP; (iii) the Γ1c absorption edge broadens and gradually disappears. Empirical pseudopotential calculations for GaP1-xN x random alloy supercells account well for all the PLE results by considering N induced changes in the valence band overlooked so far. © 2005 American Institute of Physics.

High Energy Optical Transitions in Ga(PN): Contribution from Perturbed Valence Band / FELICI, Marco; POLIMENI, Antonio; CAPIZZI, Mario; DUDIY S., V; ZUNGER, A; BUYANOVA I., A; CHEN W., M; XIN H., P; AND TU, C. W.. - STAMPA. - 772:(2005), pp. 265-266. (Intervento presentato al convegno 27th International Conference on the Physics of Semiconductors (ICPS-27) tenutosi a Flagstaff; United States nel 26-30 July 2004) [10.1063/1.1994094].

High Energy Optical Transitions in Ga(PN): Contribution from Perturbed Valence Band

FELICI, Marco;POLIMENI, Antonio;CAPIZZI, Mario;
2005

Abstract

The GaP1-xNx conduction band is investigated experimentally (by excitation photoluminescence) and theoretically (by pseudopotential supercells) for N concentrations up to x=3.5% and photon energies ranging from the optical absorption edge to 3.2 eV. With increasing x: (i) a direct-like absorption edge develops smoothly and red-shifts rapidly overtaking energy-pinned cluster states; (ii) a broad absorption plateau appears between the X1c and the Γ1c critical points of GaP; (iii) the Γ1c absorption edge broadens and gradually disappears. Empirical pseudopotential calculations for GaP1-xN x random alloy supercells account well for all the PLE results by considering N induced changes in the valence band overlooked so far. © 2005 American Institute of Physics.
2005
27th International Conference on the Physics of Semiconductors (ICPS-27)
Gallium arsenide; Semiconducting gallium; Dilute nitride
Pubblicazione in atti di convegno::04b Atto di convegno in volume
High Energy Optical Transitions in Ga(PN): Contribution from Perturbed Valence Band / FELICI, Marco; POLIMENI, Antonio; CAPIZZI, Mario; DUDIY S., V; ZUNGER, A; BUYANOVA I., A; CHEN W., M; XIN H., P; AND TU, C. W.. - STAMPA. - 772:(2005), pp. 265-266. (Intervento presentato al convegno 27th International Conference on the Physics of Semiconductors (ICPS-27) tenutosi a Flagstaff; United States nel 26-30 July 2004) [10.1063/1.1994094].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/238208
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