Low-power pulsed-laser annealing has been applied to Zn1-implanted InP samples in N2 atmosphere, attaining structural reordering and high electrical activation. The in-depth hole carrier concentration distribution has been compared with the indepth implanted Zn distribution: a [Zn] plateau appears where the activation is about 100%.
In-depth characterization of electrical carrier activation in Zn+ implanted and laser annealed InP / A., Dinia; Zollo, Giuseppe; C., Pizzuto; Vitali, Gianfranco; M., Kalitzova. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 113:(2000), pp. 385-388. [10.1016/S0038-1098(99)00511-6]
In-depth characterization of electrical carrier activation in Zn+ implanted and laser annealed InP
ZOLLO, Giuseppe;VITALI, Gianfranco;
2000
Abstract
Low-power pulsed-laser annealing has been applied to Zn1-implanted InP samples in N2 atmosphere, attaining structural reordering and high electrical activation. The in-depth hole carrier concentration distribution has been compared with the indepth implanted Zn distribution: a [Zn] plateau appears where the activation is about 100%.File allegati a questo prodotto
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