In this work we present a detailed characterization of thin oxide degradation. Starting from the experimental conditions of electrical stress, an electron scattering based model gives the time evolution of defect density. The calculated defect density is used as input parameter of models of leakage current (SILC) and low-frequency capacitance (C-f). From reproduction of experimental data of SILC and C-f, the electron scattering length, defect density in the dielectric can be extracted. A very good agreement between experimental results and simulation strongly supports the comprehensive model of oxide degradation presented here. (C) 2003 Published by Elsevier B.V.
An advanced characterization of defects in thin oxides / Caputo, Domenico; Irrera, Fernanda; Palma, Fabrizio. - In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. - ISSN 0921-5107. - 102:1-3(2003), pp. 94-98. (Intervento presentato al convegno Spring Meeting of the European-Materials-Research-Society (E-MRS) tenutosi a STRASBOURG, FRANCE nel JUN 18-21, 2002) [10.1016/s0921-5107(02)00636-0].
An advanced characterization of defects in thin oxides
CAPUTO, Domenico;IRRERA, Fernanda;PALMA, Fabrizio
2003
Abstract
In this work we present a detailed characterization of thin oxide degradation. Starting from the experimental conditions of electrical stress, an electron scattering based model gives the time evolution of defect density. The calculated defect density is used as input parameter of models of leakage current (SILC) and low-frequency capacitance (C-f). From reproduction of experimental data of SILC and C-f, the electron scattering length, defect density in the dielectric can be extracted. A very good agreement between experimental results and simulation strongly supports the comprehensive model of oxide degradation presented here. (C) 2003 Published by Elsevier B.V.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
