Nanosized precipitation in High dose Zn+ and Bi+ implanted Si is investigated by High Resolution Transmission Electron Microscopy of cross-sectional specimens. In spite of the different diffusivities of Zn and Bi in Si, their low solubility results in the precipitation of nanosized metallic inclusions revealed as superlattices composed of the host Si matrix and the implanted species.
High resolution Electron Microscopy of Zn and Bi related superlattices ion ion implanted (100) Si / Zollo, Giuseppe; G., Vitali; M., Kalitzova; D., Manno. - In: JOURNAL OF MATERIALS SCIENCE. MATERIALS IN ELECTRONICS. - ISSN 0957-4522. - STAMPA. - 14:(2003), pp. 783-786. [10.1023/A:1026296103855]
High resolution Electron Microscopy of Zn and Bi related superlattices ion ion implanted (100) Si
ZOLLO, Giuseppe;
2003
Abstract
Nanosized precipitation in High dose Zn+ and Bi+ implanted Si is investigated by High Resolution Transmission Electron Microscopy of cross-sectional specimens. In spite of the different diffusivities of Zn and Bi in Si, their low solubility results in the precipitation of nanosized metallic inclusions revealed as superlattices composed of the host Si matrix and the implanted species.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
