Crystals of (100) GaAs implanted with Zn+-ions were treated by low-power pulsed-laser annealing (LPPLA) technique. The first investigations about the effect of this treatment on the damage structure distribution in the GaAs by means of high voltage transmission electron microscopy are shown. Typical rearrangement and accumulation trends of the initially uniformly dispersed damage clusters were established after the LPPLA. The morphology of gallium oxide films grown on the surface of GaAs during LPPLA treatment and their specific behavior under electron bombardment during the observation in the microscope are reported too.
High Voltage Transmission Electron Microscopy of Low-Power Pulsed Laser Annealing of Zn-implanted GaAs / N., Pashov; M., Kalitzova; Vitali, Gianfranco; Rossi, Marco; D., Baither. - In: JAPANESE JOURNAL OF APPLIED PHYSICS. PART 1, REGULAR PAPERS & SHORT NOTES. - ISSN 0021-4922. - STAMPA. - 32:(1993), pp. 2597-2600. [10.1143/JJAP.32.2597]
High Voltage Transmission Electron Microscopy of Low-Power Pulsed Laser Annealing of Zn-implanted GaAs
VITALI, Gianfranco;ROSSI, Marco;
1993
Abstract
Crystals of (100) GaAs implanted with Zn+-ions were treated by low-power pulsed-laser annealing (LPPLA) technique. The first investigations about the effect of this treatment on the damage structure distribution in the GaAs by means of high voltage transmission electron microscopy are shown. Typical rearrangement and accumulation trends of the initially uniformly dispersed damage clusters were established after the LPPLA. The morphology of gallium oxide films grown on the surface of GaAs during LPPLA treatment and their specific behavior under electron bombardment during the observation in the microscope are reported too.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
