In this paper, an analytical model of trapping in high-k dielectrics is proposed. It starts from the general rate equation and relies on the hypothesis that the density of states involved in the capture mechanism follows a Fermi-like distribution. Thus, the energy depth of the trap level respect to the Fermi level is explicited in the model. The model is validated comparing predictions of flat band shift (calculated integrating the density of involved states) with experimental curves measured on GdSiO metal-oxide-semiconductor capacitors in many different conditions. The energy level of the trap is extracted. (C) 2010 American Institute of Physics. [doi:10.1063/1.3503583]
Trapping in high-k dielectrics / Rao, Rosario; Riccardo, Simoncini; Irrera, Fernanda. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 97:16(2010), pp. 163502-163502-3. [10.1063/1.3503583]
Trapping in high-k dielectrics
RAO, ROSARIO;IRRERA, Fernanda
2010
Abstract
In this paper, an analytical model of trapping in high-k dielectrics is proposed. It starts from the general rate equation and relies on the hypothesis that the density of states involved in the capture mechanism follows a Fermi-like distribution. Thus, the energy depth of the trap level respect to the Fermi level is explicited in the model. The model is validated comparing predictions of flat band shift (calculated integrating the density of involved states) with experimental curves measured on GdSiO metal-oxide-semiconductor capacitors in many different conditions. The energy level of the trap is extracted. (C) 2010 American Institute of Physics. [doi:10.1063/1.3503583]I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
