Starting from a physical model of the electric field that develops in the gate oxide during heavy-ion irradiation, we have experimentally and numerically investigated the single event gate damage observed in medium voltage power MOSFETs. Simulation results reveal that the total electric field reached during the heavy-ion impact is close to the one that is known to trigger the formation of latent damages during electro-static discharge (ESD) experiments.
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs
BUSATTO, Giovanni;IANNUZZO, Francesco;SANSEVERINO, Annunziata;VELARDI, Francesco
2009-01-01
Abstract
Starting from a physical model of the electric field that develops in the gate oxide during heavy-ion irradiation, we have experimentally and numerically investigated the single event gate damage observed in medium voltage power MOSFETs. Simulation results reveal that the total electric field reached during the heavy-ion impact is close to the one that is known to trigger the formation of latent damages during electro-static discharge (ESD) experiments.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
a25.2009_TNS_Heavy ions induced single event gate damage in medium voltage power MOSFET.pdf
accesso aperto
Tipologia:
Documento in Post-print
Licenza:
DRM non definito
Dimensione
686.16 kB
Formato
Adobe PDF
|
686.16 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
