Preliminary results on Si/Ge heterostructures grown by molecular beam epitaxy (MBE) are presented. RHEED, XPS and AMF data, together with photoluminescence measurements show the good quality of the samples both from the point of view of structural and optical properties.
Optical and structural characterization of SiGe alloy layers and multiple quantum wells
PINTO, Nicola;
1995-01-01
Abstract
Preliminary results on Si/Ge heterostructures grown by molecular beam epitaxy (MBE) are presented. RHEED, XPS and AMF data, together with photoluminescence measurements show the good quality of the samples both from the point of view of structural and optical properties.File in questo prodotto:
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