We demonstrate Ge/Si heterojunction photodetectors based on high quality epitaxial germanium grown on silicon. Germanium deposited by ultra-high-vacuum chemical vapor deposition (UHV-CVD) undergoes thermal annealing cycles which reduce the number of dislocations and, thus, improve the overall quality. The photodetectors exhibit record responsivity of 0.55 A/W and a sub-ns photoresponse at 1.3 mum. We describe the fabrication process as well as a complete optoelectronic characterization of the devices. (C) 2001 Elsevier Science B.V. All rights reserved.
Luan, H.c., Wada, K., Kimerling, L.c., Masini, G., Colace, L., Assanto, G. (2001). High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates. OPTICAL MATERIALS, 17(1-2), 71-73 [10.1016/S0925-3467(01)00021-0].
High efficiency photodetectors based on high quality epitaxial germanium grown on silicon substrates
COLACE, Lorenzo;ASSANTO, GAETANO
2001-01-01
Abstract
We demonstrate Ge/Si heterojunction photodetectors based on high quality epitaxial germanium grown on silicon. Germanium deposited by ultra-high-vacuum chemical vapor deposition (UHV-CVD) undergoes thermal annealing cycles which reduce the number of dislocations and, thus, improve the overall quality. The photodetectors exhibit record responsivity of 0.55 A/W and a sub-ns photoresponse at 1.3 mum. We describe the fabrication process as well as a complete optoelectronic characterization of the devices. (C) 2001 Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
