Modulation in InAs quantum dot waveguides

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Modulation in InAs quantum dot waveguides.pdf (194.61 KB)
Date
2007
Authors
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Supervisor
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Source Title
Integrated Photonics and Nanophotonics Research and Applications / Slow and Fast Light
Print ISSN
2162-2701
Electronic ISSN
Publisher
Optical Society of America
Volume
Issue
Pages
Language
English
Type
Conference Paper
Journal Title
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Abstract

Modulation in molecular beam epitaxy grown self-assembled InAs quantum dot waveguides have been studied at 1500 nm as a function of wavelength and voltage. Enhanced electro-optic coefficients compared to bulk GaAs were observed. © 2007 Optical Society of America.

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Keywords
Indium arsenide , Molecular beam epitaxy , Nanophotonics , Photonics , Semiconductor quantum dots , Waveguides , Electro optic coefficient , GaAs , InAs quantum dots , Self-assembled , Modulation
Citation
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http://hdl.handle.net/11693/27122
Published Version (Please cite this version)
https://doi.org/10.1364/IPNRA.2007.IWE4
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Department of Physics
Institute of Materials Science and Nanotechnology (UNAM)