An efficient, simple, and precise way to map strain with nanometer resolution 
in semiconductor devices

Koch, C. T.; Özdöl, V. B.; van Aken, P. A.

doi:10.1063/1.3337090

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An efficient, simple, and precise way to map strain with nanometer resolution in semiconductor devices

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Koch, C. T.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Özdöl, V. B.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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van Aken, P. A.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Koch, C. T., Özdöl, V. B., & van Aken, P. A. (2010). An efficient, simple, and precise way to map strain with nanometer resolution in semiconductor devices. Applied Physics Letters, 96: 091901. doi:10.1063/1.3337090.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-3B6C-9

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