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Probing the electronic states of high-TMR off-stoichiometric Co2MnSi thin films by hard x-ray photoelectron spectroscopy

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Karel,  Julie
Julie Karel, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Ouardi,  Siham
Siham Ouardi, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Chadov,  Stanislav
Stanislav Chadov, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Fecher,  Gerhard H.
Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Felser,  Claudia
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Kozina, X., Karel, J., Ouardi, S., Chadov, S., Fecher, G. H., Felser, C., et al. (2014). Probing the electronic states of high-TMR off-stoichiometric Co2MnSi thin films by hard x-ray photoelectron spectroscopy. Physical Review B, 89(12): 125116, pp. 1-10. doi:10.1103/PhysRevB.89.125116.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0018-BBE8-B
Abstract
The tunnel magnetoresistance ratio (TMR) of fully epitaxial magnetic tunnel junctions with an off-stoichiometric Co2MnSi Heusler alloy has been shown to exhibit a systematic dependence on Mn content, reaching 1135% at 4.2 K for Co2Mn1.29Si. In this paper, we explain the behavior of the observed TMR ratio using ab initio calculations and hard x-ray photoelectron spectroscopy (HAXPES). For the Mn-deficient samples, we show that the the drop of the TMR is caused by Co antisite atoms, which impose extra states into the minority-spin band gap. On the other hand, Mn-excess composition shows nearly half-metallic behavior. This result can be intuitively understood since both Co2MnSi and Mn2CoSi are theoretically predicted to be half-metallic ferromagnets.