Precise measurements of oxygen content: Oxygen vacancies in transparent 
conducting indium oxide films

Bellingham, J.R.; Mackenzie, A. P.; Phillips, W.A.

doi:10.1063/1.104858

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Precise measurements of oxygen content: Oxygen vacancies in transparent conducting indium oxide films

MPS-Authors

There are no MPG-Authors in the publication available

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Bellingham, J., Mackenzie, A. P., & Phillips, W. (1991). Precise measurements of oxygen content: Oxygen vacancies in transparent conducting indium oxide films. Applied Physics Letters, 58(22), 2506-2508. doi:10.1063/1.104858.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0018-E808-5

Abstract

High precision electron probe microanalysis (EPMA) has been used to measure the correlation of oxygen deficiency with carrier concentration in thin films of amorphous indium oxide. This has shown that there are ten times as many oxygen vacancies as would be expected from the carrier concentration measurements, giving a doping efficiency of 0.1. It is therefore clear that the doping mechanism is more complex than the usual picture of every oxygen vacancy producing two free electrons.