Title:
Physical understanding of strained-silicon and silicon-germanium FETs for RF and mixed-signal applications
Physical understanding of strained-silicon and silicon-germanium FETs for RF and mixed-signal applications
Author(s)
Madan, Anuj
Advisor(s)
Cressler, John D.
Editor(s)
Collections
Supplementary to
Permanent Link
Abstract
The objective of proposed research is to investigate the potential of strained silicon and
silicon-germanium (SiGe) based devices for RF/mixed-signal applications. Different device topologies, namely strained buried channel modulation doped field effect transistor (MODFET) and silicon-on-insulator (SOI) based MOSFETs, are studied in this context. Our preliminary results on SiGe MODFETs indicate strong dependence of device performance on displacement damage, which is critical for extreme environment applications. This research will be an effort towards understanding the physics of these devices in extreme environment conditions.
Sponsor
Date Issued
2008-05-28
Extent
Resource Type
Text
Resource Subtype
Thesis