Title:
Method For Low Temperature Plasma Enhanced Chemical Vapor Deposition (pecvd) Of An Oxide And Nitride Antireflection Coating On Silicon
Method For Low Temperature Plasma Enhanced Chemical Vapor Deposition (pecvd) Of An Oxide And Nitride Antireflection Coating On Silicon
Files
Author(s)
Advisor(s)
Editor(s)
Collections
Supplementary to
Permanent Link
Abstract
A sequential plasma-enhanced chemical vapor deposition (PECVD) of SiN and SiOx produces a very effective double-layer antireflection coating. This antireflection coating is compared with the frequently used and highly efficient double-layer MgF₂ /ZnS coating. It is shown that the double-layer SiOx /SiN coating improves the short-circuited current (Jsc) by 47%, open-circuit voltage (Voc) by 3.7%, and efficiency (Eff) by 55% for silicon cells with oxide surface passivation. The counterpart MgF₂ /ZnS coating gives smaller improvement in Voc and Eff. However, if silicon cells do not have the oxide passivation, the PECVD SiOx /SiN gives much greater improvement in the cell parameters, 57% in Jsc, 8% in Voc, and 66% in efficiency, compared to the MgF₂ /ZnS coating which improves Jsc by 50%, Voc by 2%, and cell efficiency by 54%. This significant additional improvement results from the PECVD deposition-induced surface/defect passivation. The internal quantum efficiency (IQE) measurements showed that the PECVD SiOx /SiN coating absorbs fair amount of photons in the short-wavelength range ( <500 nm), however, the improved surface/defect passivation more than compensates for the loss in Jsc and gives higher improvement in the cell efficiency compared to the MgF i/ZnS coating.
Sponsor
Date Issued
5/23/1995
Extent
Resource Type
Text
Resource Subtype
Patent