High quality InGaAs/AlGaAs lasers grown on Ge substrates.
- Author
- Mark D'Hondt, Zong-Qiang Yu (UGent) , Bart Depreter, Carl Sys (UGent) , Ingrid Moerman (UGent) , Piet Demeester (UGent) and P MIJLEMANS
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-173332
- MLA
- D’Hondt, Mark, et al. “High Quality InGaAs/AlGaAs Lasers Grown on Ge Substrates.” JOURNAL OF CRYSTAL GROWTH, vol. 195, no. 1–4, 1998, pp. 655–59.
- APA
- D’Hondt, M., Yu, Z.-Q., Depreter, B., Sys, C., Moerman, I., Demeester, P., & MIJLEMANS, P. (1998). High quality InGaAs/AlGaAs lasers grown on Ge substrates. JOURNAL OF CRYSTAL GROWTH, 195(1–4), 655–659.
- Chicago author-date
- D’Hondt, Mark, Zong-Qiang Yu, Bart Depreter, Carl Sys, Ingrid Moerman, Piet Demeester, and P MIJLEMANS. 1998. “High Quality InGaAs/AlGaAs Lasers Grown on Ge Substrates.” JOURNAL OF CRYSTAL GROWTH 195 (1–4): 655–59.
- Chicago author-date (all authors)
- D’Hondt, Mark, Zong-Qiang Yu, Bart Depreter, Carl Sys, Ingrid Moerman, Piet Demeester, and P MIJLEMANS. 1998. “High Quality InGaAs/AlGaAs Lasers Grown on Ge Substrates.” JOURNAL OF CRYSTAL GROWTH 195 (1–4): 655–659.
- Vancouver
- 1.D’Hondt M, Yu Z-Q, Depreter B, Sys C, Moerman I, Demeester P, et al. High quality InGaAs/AlGaAs lasers grown on Ge substrates. JOURNAL OF CRYSTAL GROWTH. 1998;195(1–4):655–9.
- IEEE
- [1]M. D’Hondt et al., “High quality InGaAs/AlGaAs lasers grown on Ge substrates.,” JOURNAL OF CRYSTAL GROWTH, vol. 195, no. 1–4, pp. 655–659, 1998.
@article{173332,
author = {{D'Hondt, Mark and Yu, Zong-Qiang and Depreter, Bart and Sys, Carl and Moerman, Ingrid and Demeester, Piet and MIJLEMANS, P}},
issn = {{0022-0248}},
journal = {{JOURNAL OF CRYSTAL GROWTH}},
language = {{eng}},
number = {{1-4}},
pages = {{655--659}},
title = {{High quality InGaAs/AlGaAs lasers grown on Ge substrates.}},
volume = {{195}},
year = {{1998}},
}