Some fundamental-aspects of profile etching at INP surfaces
- Author
- Inge Vermeir, Walter Gomes and Peter Van Daele (UGent)
- Organization
- Abstract
- Etching profiles at mask edges on (100) InP are obtained in acidic FeCl3 containing solutions under uniform illumination and in iodic acid solutions in darkness. For-both etching systems, the results of microscopic etching near mask edges are compared to the macroscopic etching behavior of individual crystallographic faces. In the case of photoetching by FeCl3, a difference in profile shape is observed between p- and n-type samples, associated with the fact that the photoetching occurs by an electrochemical mechanism At p-type samples; the slowest etching face [i.e., the (111) face] is revealed whereas at n-type, profiles with very rough bottoms are observed. A tentative interpretation for this phenomenon is proposed. Mo difference in profile shape is found between p- and n-type in the iodic acid solution, which operates through a chemical mechanism. An anisotropic microscopic etching behavior is however observed. A model, in which the presence of a thin oxide layer on the InP plays a crucial role, can explain this etching behavior.
- Keywords
- BEHAVIOR, GAP, N-TYPE, SEMICONDUCTORS
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-195327
- MLA
- Vermeir, Inge, et al. “Some Fundamental-Aspects of Profile Etching at INP Surfaces.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 142, no. 9, 1995, pp. 3226–32.
- APA
- Vermeir, I., Gomes, W., & Van Daele, P. (1995). Some fundamental-aspects of profile etching at INP surfaces. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 142(9), 3226–3232.
- Chicago author-date
- Vermeir, Inge, Walter Gomes, and Peter Van Daele. 1995. “Some Fundamental-Aspects of Profile Etching at INP Surfaces.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 142 (9): 3226–32.
- Chicago author-date (all authors)
- Vermeir, Inge, Walter Gomes, and Peter Van Daele. 1995. “Some Fundamental-Aspects of Profile Etching at INP Surfaces.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 142 (9): 3226–3232.
- Vancouver
- 1.Vermeir I, Gomes W, Van Daele P. Some fundamental-aspects of profile etching at INP surfaces. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 1995;142(9):3226–32.
- IEEE
- [1]I. Vermeir, W. Gomes, and P. Van Daele, “Some fundamental-aspects of profile etching at INP surfaces,” JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 142, no. 9, pp. 3226–3232, 1995.
@article{195327,
abstract = {{Etching profiles at mask edges on (100) InP are obtained in acidic FeCl3 containing solutions under uniform illumination and in iodic acid solutions in darkness. For-both etching systems, the results of microscopic etching near mask edges are compared to the macroscopic etching behavior of individual crystallographic faces. In the case of photoetching by FeCl3, a difference in profile shape is observed between p- and n-type samples, associated with the fact that the photoetching occurs by an electrochemical mechanism At p-type samples; the slowest etching face [i.e., the (111) face] is revealed whereas at n-type, profiles with very rough bottoms are observed. A tentative interpretation for this phenomenon is proposed. Mo difference in profile shape is found between p- and n-type in the iodic acid solution, which operates through a chemical mechanism. An anisotropic microscopic etching behavior is however observed. A model, in which the presence of a thin oxide layer on the InP plays a crucial role, can explain this etching behavior.}},
author = {{Vermeir, Inge and Gomes, Walter and Van Daele, Peter}},
issn = {{0013-4651}},
journal = {{JOURNAL OF THE ELECTROCHEMICAL SOCIETY}},
keywords = {{BEHAVIOR,GAP,N-TYPE,SEMICONDUCTORS}},
language = {{eng}},
number = {{9}},
pages = {{3226--3232}},
title = {{Some fundamental-aspects of profile etching at INP surfaces}},
volume = {{142}},
year = {{1995}},
}