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Electronic characterization of a single dangling bond on n-and p-type Si(001)-(2×1): H

(2016) SURFACE SCIENCE. 645. p.L88-L92
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INITIO MOLECULAR-DYNAMICS, SCANNING TUNNELING MICROSCOPE, TOTAL-ENERGY CALCULATIONS, WAVE BASIS-SET, SURFACE, SEMICONDUCTOR, FABRICATION, SIMULATION, DESORPTION, GERMANIUM, Single dangling bond, Si(001):H, STM, Single-atom device, Quantum transport

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MLA
Kawai, H., et al. “Electronic Characterization of a Single Dangling Bond on N-and p-Type Si(001)-(2×1): H.” SURFACE SCIENCE, vol. 645, 2016, pp. L88–92, doi:10.1016/j.susc.2015.11.001.
APA
Kawai, H., Neucheva, O., Tiong, T., Joachim, C., & Saeys, M. (2016). Electronic characterization of a single dangling bond on n-and p-type Si(001)-(2×1): H. SURFACE SCIENCE, 645, L88–L92. https://doi.org/10.1016/j.susc.2015.11.001
Chicago author-date
Kawai, H, O Neucheva, TL Tiong, C Joachim, and Mark Saeys. 2016. “Electronic Characterization of a Single Dangling Bond on N-and p-Type Si(001)-(2×1): H.” SURFACE SCIENCE 645: L88–92. https://doi.org/10.1016/j.susc.2015.11.001.
Chicago author-date (all authors)
Kawai, H, O Neucheva, TL Tiong, C Joachim, and Mark Saeys. 2016. “Electronic Characterization of a Single Dangling Bond on N-and p-Type Si(001)-(2×1): H.” SURFACE SCIENCE 645: L88–L92. doi:10.1016/j.susc.2015.11.001.
Vancouver
1.
Kawai H, Neucheva O, Tiong T, Joachim C, Saeys M. Electronic characterization of a single dangling bond on n-and p-type Si(001)-(2×1): H. SURFACE SCIENCE. 2016;645:L88–92.
IEEE
[1]
H. Kawai, O. Neucheva, T. Tiong, C. Joachim, and M. Saeys, “Electronic characterization of a single dangling bond on n-and p-type Si(001)-(2×1): H,” SURFACE SCIENCE, vol. 645, pp. L88–L92, 2016.
@article{8150777,
  author       = {{Kawai, H and Neucheva, O and Tiong, TL and Joachim, C and Saeys, Mark}},
  issn         = {{0039-6028}},
  journal      = {{SURFACE SCIENCE}},
  keywords     = {{INITIO MOLECULAR-DYNAMICS,SCANNING TUNNELING MICROSCOPE,TOTAL-ENERGY CALCULATIONS,WAVE BASIS-SET,SURFACE,SEMICONDUCTOR,FABRICATION,SIMULATION,DESORPTION,GERMANIUM,Single dangling bond,Si(001):H,STM,Single-atom device,Quantum transport}},
  language     = {{eng}},
  pages        = {{L88--L92}},
  title        = {{Electronic characterization of a single dangling bond on n-and p-type Si(001)-(2×1): H}},
  url          = {{http://doi.org/10.1016/j.susc.2015.11.001}},
  volume       = {{645}},
  year         = {{2016}},
}

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