Electronic characterization of a single dangling bond on n-and p-type Si(001)-(2×1): H
- Author
- H Kawai, O Neucheva, TL Tiong, C Joachim and Mark Saeys (UGent)
- Organization
- Keywords
- INITIO MOLECULAR-DYNAMICS, SCANNING TUNNELING MICROSCOPE, TOTAL-ENERGY CALCULATIONS, WAVE BASIS-SET, SURFACE, SEMICONDUCTOR, FABRICATION, SIMULATION, DESORPTION, GERMANIUM, Single dangling bond, Si(001):H, STM, Single-atom device, Quantum transport
Downloads
-
(...).pdf
- full text
- |
- UGent only
- |
- |
- 5.14 MB
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8150777
- MLA
- Kawai, H., et al. “Electronic Characterization of a Single Dangling Bond on N-and p-Type Si(001)-(2×1): H.” SURFACE SCIENCE, vol. 645, 2016, pp. L88–92, doi:10.1016/j.susc.2015.11.001.
- APA
- Kawai, H., Neucheva, O., Tiong, T., Joachim, C., & Saeys, M. (2016). Electronic characterization of a single dangling bond on n-and p-type Si(001)-(2×1): H. SURFACE SCIENCE, 645, L88–L92. https://doi.org/10.1016/j.susc.2015.11.001
- Chicago author-date
- Kawai, H, O Neucheva, TL Tiong, C Joachim, and Mark Saeys. 2016. “Electronic Characterization of a Single Dangling Bond on N-and p-Type Si(001)-(2×1): H.” SURFACE SCIENCE 645: L88–92. https://doi.org/10.1016/j.susc.2015.11.001.
- Chicago author-date (all authors)
- Kawai, H, O Neucheva, TL Tiong, C Joachim, and Mark Saeys. 2016. “Electronic Characterization of a Single Dangling Bond on N-and p-Type Si(001)-(2×1): H.” SURFACE SCIENCE 645: L88–L92. doi:10.1016/j.susc.2015.11.001.
- Vancouver
- 1.Kawai H, Neucheva O, Tiong T, Joachim C, Saeys M. Electronic characterization of a single dangling bond on n-and p-type Si(001)-(2×1): H. SURFACE SCIENCE. 2016;645:L88–92.
- IEEE
- [1]H. Kawai, O. Neucheva, T. Tiong, C. Joachim, and M. Saeys, “Electronic characterization of a single dangling bond on n-and p-type Si(001)-(2×1): H,” SURFACE SCIENCE, vol. 645, pp. L88–L92, 2016.
@article{8150777, author = {{Kawai, H and Neucheva, O and Tiong, TL and Joachim, C and Saeys, Mark}}, issn = {{0039-6028}}, journal = {{SURFACE SCIENCE}}, keywords = {{INITIO MOLECULAR-DYNAMICS,SCANNING TUNNELING MICROSCOPE,TOTAL-ENERGY CALCULATIONS,WAVE BASIS-SET,SURFACE,SEMICONDUCTOR,FABRICATION,SIMULATION,DESORPTION,GERMANIUM,Single dangling bond,Si(001):H,STM,Single-atom device,Quantum transport}}, language = {{eng}}, pages = {{L88--L92}}, title = {{Electronic characterization of a single dangling bond on n-and p-type Si(001)-(2×1): H}}, url = {{http://doi.org/10.1016/j.susc.2015.11.001}}, volume = {{645}}, year = {{2016}}, }
- Altmetric
- View in Altmetric
- Web of Science
- Times cited: