Design of an 845-nm GaAs vertical-cavity silicon-integrated laser with an intracavity grating for coupling to a SiN waveguide circuit
- Author
- Sulakshna Kumari (UGent) , Johan Gustavsson, Emanuel P Haglund, Jorgen Bengtsson, Anders Larsson, Günther Roelkens (UGent) and Roel Baets (UGent)
- Organization
- Project
-
- INSPECTRA (Silicon-photonics-based laser spectroscopy platform: towards a paradigm shift in environmental monitoring and health care)
- Center for nano- and biophotonics (NB-Photonics)
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8527570
- MLA
- Kumari, Sulakshna, et al. “Design of an 845-Nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit.” IEEE PHOTONICS JOURNAL, vol. 9, no. 4, Institute of Electrical and Electronics Engineers (IEEE), 2017, pp. 1–9, doi:10.1109/jphot.2017.2717380.
- APA
- Kumari, S., Gustavsson, J., Haglund, E. P., Bengtsson, J., Larsson, A., Roelkens, G., & Baets, R. (2017). Design of an 845-nm GaAs vertical-cavity silicon-integrated laser with an intracavity grating for coupling to a SiN waveguide circuit. IEEE PHOTONICS JOURNAL, 9(4), 1–9. https://doi.org/10.1109/jphot.2017.2717380
- Chicago author-date
- Kumari, Sulakshna, Johan Gustavsson, Emanuel P Haglund, Jorgen Bengtsson, Anders Larsson, Günther Roelkens, and Roel Baets. 2017. “Design of an 845-Nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit.” IEEE PHOTONICS JOURNAL 9 (4): 1–9. https://doi.org/10.1109/jphot.2017.2717380.
- Chicago author-date (all authors)
- Kumari, Sulakshna, Johan Gustavsson, Emanuel P Haglund, Jorgen Bengtsson, Anders Larsson, Günther Roelkens, and Roel Baets. 2017. “Design of an 845-Nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit.” IEEE PHOTONICS JOURNAL 9 (4): 1–9. doi:10.1109/jphot.2017.2717380.
- Vancouver
- 1.Kumari S, Gustavsson J, Haglund EP, Bengtsson J, Larsson A, Roelkens G, et al. Design of an 845-nm GaAs vertical-cavity silicon-integrated laser with an intracavity grating for coupling to a SiN waveguide circuit. IEEE PHOTONICS JOURNAL. 2017;9(4):1–9.
- IEEE
- [1]S. Kumari et al., “Design of an 845-nm GaAs vertical-cavity silicon-integrated laser with an intracavity grating for coupling to a SiN waveguide circuit,” IEEE PHOTONICS JOURNAL, vol. 9, no. 4, pp. 1–9, 2017.
@article{8527570, articleno = {{1504109}}, author = {{Kumari, Sulakshna and Gustavsson, Johan and Haglund, Emanuel P and Bengtsson, Jorgen and Larsson, Anders and Roelkens, Günther and Baets, Roel}}, issn = {{1943-0655}}, journal = {{IEEE PHOTONICS JOURNAL}}, language = {{eng}}, number = {{4}}, pages = {{1504109:1--1504109:9}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{Design of an 845-nm GaAs vertical-cavity silicon-integrated laser with an intracavity grating for coupling to a SiN waveguide circuit}}, url = {{http://doi.org/10.1109/jphot.2017.2717380}}, volume = {{9}}, year = {{2017}}, }
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