A method is described for the growth of high purity crystalline thin film C\sb60. Films grown by this method are analyzed by means of x-ray diffraction, low energy electron diffraction, and photoluminescence. An excimeric model of the processes leading to the observed photoluminescence spectrum is proposed. This model is supported by the locations of spectral features in the photoluminescence spectrum as well as by agreement with the cooling dependence, temperature dependence, and the lack of film thickness dependence of the photoluminescence spectrum. The model is used to explain the observed photoluminescence spectrum of polycrystalline C\sb60.