Ion irradiation of a-SiC:H produces strong reduction of the visible room temperature luminescence detected at very low ion fluence, typically 10(14) ions/cm(2) for a 150 keV H ion beam. Thermal annealing ill the range 200-500 degrees C is able to restore and/or enhance the original luminescence yield. Defects evolution induced by ion irradiation has been detected by Photothermal Deflection Spectroscopy (PDS) through their absorption in the sub-gap region and an increase up to a factor four has been observed in quenched materials. Analysis of the data with existing recombination models gives important insight on the recombination process itself through the determination of a characteristic carrier-defect average distance. Also. insight into the possible microscopic structure of the material has been inferred, After a cycle of ion irradiation and annealing. the stability of the luminescence under illumination is also increased, These facts point to possible increased performances of a-SiC:H based optoelectronic devices. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

Luminescence quenching in 150 keV proton irradiated a-SiC:H

REITANO, Riccardo;MUSUMECI, Paolo;
1999-01-01

Abstract

Ion irradiation of a-SiC:H produces strong reduction of the visible room temperature luminescence detected at very low ion fluence, typically 10(14) ions/cm(2) for a 150 keV H ion beam. Thermal annealing ill the range 200-500 degrees C is able to restore and/or enhance the original luminescence yield. Defects evolution induced by ion irradiation has been detected by Photothermal Deflection Spectroscopy (PDS) through their absorption in the sub-gap region and an increase up to a factor four has been observed in quenched materials. Analysis of the data with existing recombination models gives important insight on the recombination process itself through the determination of a characteristic carrier-defect average distance. Also. insight into the possible microscopic structure of the material has been inferred, After a cycle of ion irradiation and annealing. the stability of the luminescence under illumination is also increased, These facts point to possible increased performances of a-SiC:H based optoelectronic devices. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/3275
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