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Abstract:

A comprehensive study of nonstoichiometry titanium oxide thin films (TiO x , 0.3≤x≤2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic force microscopy. An abrupt transition from metallic characteristics to a wide gap semiconductor is observed in a very narrow range of oxygen variation. Concomitantly with this change the crystal structure and morphology suffer remarkable physical properties modifications. This transformation is ascribed to surface-volume energy minimization due to the influence of oxygen determining the size of the TiO 2 particles during coalescence. © 2010 American Institute of Physics.

Registro:

Documento: Artículo
Título:A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
Autor:Marchi, M.C.; Bilmes, S.A.; Ribeiro, C.T.M.; Ochoa, E.A.; Kleinke, M.; Alvarez, F.
Filiación:INQUIMAE-DQIAyQF, Facultad de Ciencias Exactas y Naturales, Ciudad Universitaria, Pabellón II, C1428EHA Buenos Aires, Argentina
LTF, Instituto de Física, USP, P.O. Box 369, São Carlos 13560-250, Brazil
Instituto de Física Gleb Wataghin, UNICAMP, 13083-970 Campinas, São Paulo, Brazil
Palabras clave:Abrupt transition; Comprehensive studies; Crystal structure and morphology; Energy minimization; Influence of oxygen; Ion beam deposition; Ion beam deposition technique; Non-stoichiometry; TiO; Titanium oxide thin films; Wide-gap semiconductor; X-ray photoelectrons; Atomic force microscopy; Atomic spectroscopy; Chemical modification; Coalescence; Crystal structure; Fourier transform infrared spectroscopy; Fourier transforms; Ion beams; Oxide films; Oxygen; Photoelectron spectroscopy; Physical properties; Stoichiometry; Titanium; Titanium oxides; Film preparation
Año:2010
Volumen:108
Número:6
DOI: http://dx.doi.org/10.1063/1.3481442
Título revista:Journal of Applied Physics
Título revista abreviado:J Appl Phys
ISSN:00218979
CODEN:JAPIA
PDF:https://bibliotecadigital.exactas.uba.ar/download/paper/paper_00218979_v108_n6_p_Marchi.pdf
Registro:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00218979_v108_n6_p_Marchi

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Citas:

---------- APA ----------
Marchi, M.C., Bilmes, S.A., Ribeiro, C.T.M., Ochoa, E.A., Kleinke, M. & Alvarez, F. (2010) . A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition. Journal of Applied Physics, 108(6).
http://dx.doi.org/10.1063/1.3481442
---------- CHICAGO ----------
Marchi, M.C., Bilmes, S.A., Ribeiro, C.T.M., Ochoa, E.A., Kleinke, M., Alvarez, F. "A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition" . Journal of Applied Physics 108, no. 6 (2010).
http://dx.doi.org/10.1063/1.3481442
---------- MLA ----------
Marchi, M.C., Bilmes, S.A., Ribeiro, C.T.M., Ochoa, E.A., Kleinke, M., Alvarez, F. "A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition" . Journal of Applied Physics, vol. 108, no. 6, 2010.
http://dx.doi.org/10.1063/1.3481442
---------- VANCOUVER ----------
Marchi, M.C., Bilmes, S.A., Ribeiro, C.T.M., Ochoa, E.A., Kleinke, M., Alvarez, F. A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition. J Appl Phys. 2010;108(6).
http://dx.doi.org/10.1063/1.3481442