Abstract:
Progress of silicon-based technology is nearing its physical limit, as the minimum feature size of components is reaching a mere 10 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next-generation electronics. Significant progress has already been made in the past decade, and devices are beginning to hit the market; however, this progress has mainly been the result of empirical trial and error. Hence, gaining theoretical insight is of the essence. In the present work, we report the striking result of a connection between the resistive switching and shock-wave formation, a classic topic of nonlinear dynamics. We argue that the profile of oxygen vacancies that migrate during the commutation forms a shock wave that propagates through a highly resistive region of the device. We validate the scenario by means of model simulations and experiments in a manganese-oxide-based memristor device, and we extend our theory to the case of binary oxides. The shock-wave scenario brings unprecedented physical insight and enables us to rationalize the process of oxygen-vacancy-driven resistive change with direct implications for a key technological aspect-the commutation speed.
Registro:
Documento: |
Artículo
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Título: | Shock waves and commutation speed of memristors |
Autor: | Tang, S.; Tesler, F.; Marlasca, F.G.; Levy, P.; Dobrosavljevic, V.; Rozenberg, M. |
Filiación: | Department of Physics and National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32306, United States Departamento de Física-IFIBA, FCEN, Universidad de Buenos Aires, Ciudad Universitaria Pabellón I, (1428), Buenos Aires, Argentina GIA-CAC-CNEA, Avenida Gral Paz 1499 (1650) San Martín, Pcia Buenos Aires, Argentina Laboratoire de Physique des Solides, CNRS, Université Paris-Sud, Université Paris-Saclay, Orsay Cedex, 91405, France
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Palabras clave: | Manganese oxide; Memristors; Oxygen vacancies; Transition metal oxides; Transition metals; Vacancies; Minimum feature sizes; Model simulation; Physical limits; Resistive switching; Resistive switching behaviors; Silicon-based technology; Technological aspects; Trial and error; Shock waves |
Año: | 2016
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Volumen: | 6
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Número: | 1
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DOI: |
http://dx.doi.org/10.1103/PhysRevX.6.011028 |
Título revista: | Physical Review X
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Título revista abreviado: | Phys. Rev. X
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ISSN: | 21603308
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Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_21603308_v6_n1_p_Tang |
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Citas:
---------- APA ----------
Tang, S., Tesler, F., Marlasca, F.G., Levy, P., Dobrosavljevic, V. & Rozenberg, M.
(2016)
. Shock waves and commutation speed of memristors. Physical Review X, 6(1).
http://dx.doi.org/10.1103/PhysRevX.6.011028---------- CHICAGO ----------
Tang, S., Tesler, F., Marlasca, F.G., Levy, P., Dobrosavljevic, V., Rozenberg, M.
"Shock waves and commutation speed of memristors"
. Physical Review X 6, no. 1
(2016).
http://dx.doi.org/10.1103/PhysRevX.6.011028---------- MLA ----------
Tang, S., Tesler, F., Marlasca, F.G., Levy, P., Dobrosavljevic, V., Rozenberg, M.
"Shock waves and commutation speed of memristors"
. Physical Review X, vol. 6, no. 1, 2016.
http://dx.doi.org/10.1103/PhysRevX.6.011028---------- VANCOUVER ----------
Tang, S., Tesler, F., Marlasca, F.G., Levy, P., Dobrosavljevic, V., Rozenberg, M. Shock waves and commutation speed of memristors. Phys. Rev. X. 2016;6(1).
http://dx.doi.org/10.1103/PhysRevX.6.011028