1/f(gamma) tunnel current noise through ...
Type de document :
Compte-rendu et recension critique d'ouvrage
Titre :
1/f(gamma) tunnel current noise through Si-bound alkyl monolayers
Auteur(s) :
Clement, N. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pleutin, S. [Auteur]
Seitz, O. [Auteur]
Lenfant, Stephane [Auteur]
Vuillaume, D. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pleutin, S. [Auteur]
Seitz, O. [Auteur]
Lenfant, Stephane [Auteur]
Vuillaume, D. [Auteur]
Titre de la revue :
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Pagination :
205407-1-5
Éditeur :
American Physical Society
Date de publication :
2007
ISSN :
1098-0121
Discipline(s) HAL :
Physique [physics]
Résumé en anglais : [en]
We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f γ power spectrum noise with 1< γ <1.2. ...
Lire la suite >We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f γ power spectrum noise with 1< γ <1.2. We observe a slight biasdependent background of the normalized current noise power spectrum (SI/I²). However, a local increase is also observed over a certain bias range, mainly if V > 0.4 V, with an amplitude varying from device to device. We attribute this effect to an energy-dependenttrap-induced tunnel current. We find that the background noise, SI, scales with 2 (∂I / ∂V ) . A model is proposed showing qualitative agreements with our experimental dataLire moins >
Lire la suite >We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f γ power spectrum noise with 1< γ <1.2. We observe a slight biasdependent background of the normalized current noise power spectrum (SI/I²). However, a local increase is also observed over a certain bias range, mainly if V > 0.4 V, with an amplitude varying from device to device. We attribute this effect to an energy-dependenttrap-induced tunnel current. We find that the background noise, SI, scales with 2 (∂I / ∂V ) . A model is proposed showing qualitative agreements with our experimental dataLire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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- http://arxiv.org/pdf/1003.1373
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- 1003.1373.pdf
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- 1003.1373
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