Low temperature growth of crystalline magnesium oxide on hexagonal silicon carbide (0001) by molecular beam epitaxy

Permanent URL: http://hdl.handle.net/2047/d20000711
Title:
Low temperature growth of crystalline magnesium oxide on hexagonal silicon carbide (0001) by molecular beam epitaxy
Creator:
Goodrich, Trevor L. (Author)
Parisi, J. (Author)
Cai, Zhuhua (Author)
Ziemer, Katherine S. (Author)
Publisher:
American Institute of Physics
Copyright date:
2007
Type of resource:
Text
Genre:
Articles
Format:
electronic
Digital origin:
born digital
Abstract/Description:
Magnesium oxide (111) was grown epitaxially on hexagonal silicon carbide (H-SiC) (0001) substrates at low temperatures by molecular beam epitaxy and a remote oxygen plasma source. The films were characterized by reflection high-energy electron diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. Crystal structure, morphology, and growth rate of the magnesium oxide (MgO) films were found to be dependent on the magnesium flux, indicating a magnesium adsorption controlled growth mechanism. The single crystalline MgO thin films had an epitaxial relationship where MgO (111) 6H-SiC (0001) and were stable in both air and 10-9 Torr up to 1023 K.
Comments:
Originally published in Applied Physics Letters, vol.90, no.4, January 2007. doi: 10.1063/1.2436636
Subjects and keywords:
Thin films
Magnesium oxide
Silicon carbide
Molecular beam epitaxy
complex oxides
molecular beam epitaxy
Chemical Engineering
Permanent Link:
http://hdl.handle.net/2047/d20000711

Downloads