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Radiation used to temperature compensate semiconductor strain gagesExposure to high energy electron radiation reduces the temperature coefficients of resistance and gage factor of a range of resistivities of n- and p-type semiconductor silicon strain gages. After irradiation, the gages are heated to a high temperature for a 24-hour period to stabilize their temperature coefficients.
Document ID
19660000185
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Gross, C.
Date Acquired
August 3, 2013
Publication Date
May 1, 1966
Subject Category
Physical Sciences
Report/Patent Number
LAR-207
Accession Number
66B10186
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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