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Radiation tolerant silicon nitride insulated gate field effect transistorsMetal-Insulated-Semiconductor Field Effect Transistor /MISFET/ device uses a silicon nitride passivation layer over a thin silicon oxide layer to enhance the radiation tolerance. It is useful in electronic systems exposed to space radiation environment or the effects of nuclear weapons.
Document ID
19690000253
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Newman, P. A.
Date Acquired
August 5, 2013
Publication Date
July 1, 1969
Subject Category
Electronic Components And Circuits
Report/Patent Number
GSC-10581
Accession Number
69B10253
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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