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Inorganic bonding of semiconductor strain gagesInorganic bonding materials minimize outgassing and improve electrical and mechanical properties of semiconductor strain-gage transducers in high-vacuum and high-temperature operations. The two basic methods described are ceramic-glass-bonding and metallic bond formation between the strain gage and the substrate.
Document ID
19700000207
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Woodruff, N. L. (KULITE SEMICONDUCTOR PROD., INC.)
Date Acquired
August 5, 2013
Publication Date
July 1, 1970
Subject Category
Fabrication Technology
Report/Patent Number
GSC-10833
Accession Number
70B10215
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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