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Temperature-independent resistor for microelectronic circuitsHeat treating insulating crystals in gaseous hydrogen atmosphere produce resistive device which is temperature-independent from 77 to 295 degrees K. Increasing the concentration of hydrogen within the crystal yields semiconductor, hybrid, and metallic conduction characteristics which are combined with a depletion layer at the surface.
Document ID
19700000265
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Aegerter, S. (CALIF. UNIV.)
Libby, W. F.
Date Acquired
August 5, 2013
Publication Date
May 1, 1970
Subject Category
Electronic Components And Circuits
Report/Patent Number
HQN-10382
Accession Number
70B10276
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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