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Nonvolatile read/write memory element - A conceptMemory, with limited number of programming cycles, is achieved by using verticle, fusible links in series with oxide breakthrough elements. Memory elements are fabricated with integrated circuit technology and are ideal for low power digital computer application.
Document ID
19710000344
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Cricchi, J. R. (WESTINGHOUSE ELEC. CORP.)
Lytle, W. J.
Date Acquired
August 6, 2013
Publication Date
September 1, 1971
Subject Category
Electronic Components And Circuits
Report/Patent Number
GSC-10993
Accession Number
71B10346
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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