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Dependence of defect introduction on temperature and resistivity and some long-term annealing effectsThe effort reported here represents data of lithium properties in bulk-silicon samples before and after irradiation for analytical information required to characterize the interactions of lithium with radiation-induced defects in silicon. A model of the damage and recovery mechanisms in irradiated-lithium-containing solar cells is developed based on making measurements of the Hall coefficient and resistivity of samples irradiated by 1-MeV electrons. Experiments on bulk samples included Hall coefficient and resistivity measurements taken as a function of: (1) bombardment temperature, (2) resistivity, (3) fluence, (4) oxygen concentration, and (5) annealing time at temperatures from 300 to 373 K.
Document ID
19720002408
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Brucker, G. J. (Radio Corp. of America Princeton, NJ, United States)
Date Acquired
August 6, 2013
Publication Date
September 15, 1971
Publication Information
Publication: JPL Proc. of the Fourth Ann. Conf. on Effects of Lithium Doping on Silicon Solar Cells
Subject Category
Auxiliary Systems
Accession Number
72N10057
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19720002403Collected WorksProceedings of the Fourth Annual Conference on Effects of Lithium Doping on Silicon Solar Cells
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