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A CW Gunn diode bistable switching elementA current-controlled bistable switching element using a CW Gunn diode is reported. Switching rates of the order of 10 MHz were obtained with modest circuits. Switching was initiated by current pulses of short duration (5 to 10 nsec). Rise times of the order of several nanoseconds could be obtained. The apparent mechanism which permits the bistable operation of the Gunn diode is the reduction in the mobility of the GaAs active layer due to heating of the device.
Document ID
19720005553
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Hurtado, M. (Washington Univ. Saint Louis, MO, United States)
Rosenbaum, F. J. (Washington Univ. Saint Louis, MO, United States)
Date Acquired
August 6, 2013
Publication Date
November 1, 1971
Subject Category
Electronic Equipment
Report/Patent Number
MEMO-71-12
NASA-CR-124733
Accession Number
72N13202
Funding Number(s)
CONTRACT_GRANT: NGL-26-008-054
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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