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Low-temperature solid-state phase transformations in 2H silicon carbideSingle crystals of 2H SiC were observed to undergo phase transformations at temperatures as low as 400 C. Some 2H crystals transformed to a structure with one-dimensional disorder along the crystal c axis. Others transformed to a faulted cubic/6H structure. The transformation is time and temperature dependent and is greatly enhanced by dislocations. Observations indicate that the transformation takes place by means of a slip process perpendicular to the c axis. Cubic SiC crystals were observed to undergo a solid state transformation above 1400 C.
Document ID
19720012155
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Technical Note (TN)
Authors
Will, H. A. (NASA Lewis Research Center Cleveland, OH, United States)
Powell, J. A. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 2, 2013
Publication Date
March 1, 1972
Subject Category
Physics, Solid-State
Report/Patent Number
NASA-TN-D-6717
E-6545
Accession Number
72N19805
Funding Number(s)
PROJECT: RTOP 112-27
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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