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Simplified fabrication of back surface electric field silicon cells and novel characteristics of such cellsAn investigation of the characteristics and behavior of 10 ohm-cm silicon cells having abnormally high open-circuit voltages was made. The cells studied were made by a new, highly simplified, contact fabrication process which creates both a contact and a thin electric field region at the cell back surface without the need for phosphorus layer removal. These cells had open-circuit voltages of about 0.58 V and their performance as a function of thickness, temperature, and 1 MeV electron irradiation is detailed. The study showed that 10 ohm-cm back-surface-field cells can have the high initial efficiencies and desirable temperature behavior of low resistivity cells. Thin back-surface-field cells were made and showed, in addition, much greater radiation damage resistance. A mechanism is proposed to explain the results.
Document ID
19720016393
Acquisition Source
Legacy CDMS
Document Type
Technical Memorandum (TM)
Authors
Mandelkorn, J. (NASA Lewis Research Center Cleveland, OH, United States)
Lamneck, J. H., Jr. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 2, 2013
Publication Date
January 1, 1972
Subject Category
Auxiliary Systems
Report/Patent Number
NASA-TM-X-68060
E-6923
Meeting Information
Meeting: Photovoltaic Specialists Conf.
Location: Silver Spring, MD
Country: United States
Start Date: May 2, 1972
End Date: May 4, 1972
Sponsors: IEEE
Accession Number
72N24043
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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