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Gallium nitride optoelectronic devicesThe growth of bulk gallium nitride crystals was achieved by the ammonolysis of gallium monochloride. Gallium nitride single crystals up to 2.5 x 0.5 cm in size were produced. The crystals are suitable as substrates for the epitaxial growth of gallium nitride. The epitaxial growth of gallium nitride on sapphire substrates with main faces of (0001) and (1T02) orientations was achieved by the ammonolysis of gallium monochloride in a gas flow system. The grown layers had electron concentrations in the range of 1 to 3 x 10 to the 19th power/cu cm and Hall mobilities in the range of 50 to 100 sq cm/v/sec at room temperature.
Document ID
19730004080
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Chu, T. L. (Southern Methodist Univ. Dallas, TX, United States)
Chu, S. S. (Southern Methodist Univ. Dallas, TX, United States)
Date Acquired
September 2, 2013
Publication Date
September 15, 1972
Subject Category
Physics, Solid-State
Report/Patent Number
NASA-CR-112211
Accession Number
73N12807
Funding Number(s)
CONTRACT_GRANT: NGR-44-007-052
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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