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Float zone processing in a weightless environmentResults are given for investigations into: (1) the physical limits which set the maximum practical diameters of Si crystals that can be processed by the float-zone method in a near weightless environment, and (2) the economic impact of large, space-produced Si crystals on the electronics industry. The stability of the melt is evaluated. Heat transfer and fluid flow within the melt as dependent on the crystal size and the degree and type of rotation imparted to the melt are studied. Methods of utilizing the weightless environment for the production of large, stress-free Si crystals of uniform composition are proposed. The economic effect of large size Si crystals, their potential applications, likely utilization and cost advantages in LSI, integrated circuits, and power devices are also evaluated. Foreseeable advantages of larger diameter wafers of good characteristics and the possibilities seen for greater perfection resulting from stress-free growth are discussed.
Document ID
19750018951
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Fowle, A. A. (Little (Arthur D.), Inc. Cambridge, MA, United States)
Haggerty, J. S. (Little (Arthur D.), Inc. Cambridge, MA, United States)
Strong, P. F. (Little (Arthur D.), Inc. Cambridge, MA, United States)
Rudenberg, G. (Little (Arthur D.), Inc. Cambridge, MA, United States)
Kronauer, R. (Harvard Univ.)
Date Acquired
September 3, 2013
Publication Date
October 1, 1974
Subject Category
Astronautics (General)
Report/Patent Number
NASA-CR-143876
Accession Number
75N27023
Funding Number(s)
CONTRACT_GRANT: NAS8-29877
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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