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Dip coating process: Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array projectTo date, an experimental dip-coating facility was constructed. Using this facility, relatively thin (1 mm) mullite and alumina substrates were successfully dip-coated with 2.5 - 3.0 ohm-cm, p-type silicon with areas of approximately 20 sq cm. The thickness and grain size of these coatings are influenced by the temperature of the melt and the rate at which the substrate is pulled from the melt. One mullite substrate had dendrite-like crystallites of the order of 1 mm wide and 1 to 2 cm long. Their axes were aligned along the direction of pulling. A large variety of substrate materials were purchased or developed enabling the program to commence a substrate definition evaluation. Due to the insulating nature of the substrate, the bottom layer of the p-n junction may have to be made via the top surface. The feasibility of accomplishing this was demonstrated using single crystal wafers.
Document ID
19760015459
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Heaps, J. D. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Maciolek, R. B. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Harrison, W. B. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Wolner, H. A. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Hendrickson, G. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Nelson, L. D. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
September 3, 2013
Publication Date
March 22, 1976
Subject Category
Mechanical Engineering
Report/Patent Number
NASA-CR-146874
QR-2
Accession Number
76N22547
Funding Number(s)
CONTRACT_GRANT: JPL-954356
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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