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Fabrication of polycrystalline solar cells on low-cost substratesA new method of producing p-n junction semiconductors for solar cells was described; the principal objective of this investigation is to reduce production costs significantly by depositing polycrystalline silicon on a relatively cheap substrate such as metallurgical-grade silicon, graphite, or steel. The silicon layer contains appropriate dopants, and the substrates are coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures of these compounds.
Document ID
19760021547
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Chu, T. L.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
August 8, 2013
Publication Date
June 8, 1976
Subject Category
Energy Production And Conversion
Accession Number
76N28635
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-CASE-GSC-12023-1|US-PATENT-3,961,997|NASA-CASE-GSC-12022-1
Patent Application
US-PATENT-APPL-SN-576488
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