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Application of the SEM to the measurement of solar cell parametersTechniques are described which make use of the SEM to measure the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.
Document ID
19770014604
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Weizer, V. G. (NASA Lewis Research Center Cleveland, OH, United States)
Andrews, C. W. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 3, 2013
Publication Date
January 1, 1977
Subject Category
Energy Production And Conversion
Report/Patent Number
NASA-TM-X-73637
E-9138
Meeting Information
Meeting: Ann. Scanning Electron Microscopy Symp.
Location: Chicago
Start Date: March 28, 1977
End Date: April 1, 1977
Sponsors: IIT
Accession Number
77N21548
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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