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Laser-zone growth in a Ribbon-To-Ribbon (RTR) process silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array projectThe Ribbon-to-Ribbon (RTR) approach to silicon ribbon growth was investigated. An existing RTR apparatus, RTR#1, was upgraded to allow for 5 cm wide ribbon growth with a finite stroke length of at least 15 cm. A second RTR apparatus, RTR#2, was designed, built, and operated which utilizes continuous feed mechanisms and allows continuous growth of 7.5 cm wide ribbons. RTR#2 includes development and utilization of advanced beam scanning (or shaping), high power lasers, and thermal profile modification elements to attain maximum growth velocities (with a design goal of 18 cm/min). Materials studies, process development, and thermal analyses are also described. Residual stresses and dislocation densities were minimized through theoretical and experimental efforts towards optimization of thermal profiles. Growth runs were performed on RTR#2 and solar cells were fabricated which demonstrated efficiencies greater than 10%.
Document ID
19770020560
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Gurtler, R. W. (Motorola, Inc. Phoenix, AZ, United States)
Baghdadi, A. (Motorola, Inc. Phoenix, AZ, United States)
Wise, J. (Motorola, Inc. Phoenix, AZ, United States)
Ellis, R. J. (Motorola, Inc. Phoenix, AZ, United States)
Date Acquired
September 3, 2013
Publication Date
June 1, 1977
Subject Category
Energy Production And Conversion
Report/Patent Number
QR-5
ERDA/JPL-954376-77/3
NASA-CR-153908
REPT-2256/6
Accession Number
77N27504
Funding Number(s)
CONTRACT_GRANT: NAS7-100
CONTRACT_GRANT: JPL-954376
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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