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Cameras for semiconductor process controlThe application of X-ray topography to semiconductor process control is described, considering the novel features of the high speed camera and the difficulties associated with this technique. The most significant results on the effects of material defects on device performance are presented, including results obtained using wafers processed entirely within this institute. Defects were identified using the X-ray camera and correlations made with probe data. Also included are temperature dependent effects of material defects. Recent applications and improvements of X-ray topographs of silicon-on-sapphire and gallium arsenide are presented with a description of a real time TV system prototype and of the most recent vacuum chuck design. Discussion is included of our promotion of the use of the camera by various semiconductor manufacturers.
Document ID
19780003426
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Porter, W. A. (Texas A&M Univ. College Station, TX, United States)
Parker, D. L. (Texas A&M Univ. College Station, TX, United States)
Date Acquired
September 3, 2013
Publication Date
August 1, 1977
Subject Category
Instrumentation And Photography
Report/Patent Number
NASA-CR-150459
Accession Number
78N11369
Funding Number(s)
CONTRACT_GRANT: NAS8-26379
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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